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PRELIMINARY DATA SHEET
PACKAGED HIGH DYNAMIC RANGE PHEMT * FEATURES 1.0 dB Noise Figure at 1.8 GHz 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz 31 dBm IP3 at 1.8 GHz 60% Power-Added-Efficiency
LPD200MX
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DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3N4, and the micro X package is ideal for low-cost, high-performance applications that require a surfacemount package. The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25C
Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Intercept Point Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB PAE NF IP3 GM IGSO VP |VBDGS| |VBDGD| Test Conditions VDS = 2 V; VGS = 0 V f=1.8GHz; VDS = 5 V; IDS = 50% IDSS f=1.8GHz; VDS = 5 V; IDS = 50% IDSS f=1.8GHz; VDS = 5 V; IDS = 50% IDSS; POUT = 19.5 dBm f=1.8GHz; VDS = 5V; IDS = 50% IDSS f=1.8GHz; VDS = 3V; IDS = 25% IDSS f=1.8GHz; VDS = 5V; IDS = 50% IDSS; POUT = 4 dBm VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 1 mA IGS = 1 mA IGD = 1 mA -0.25 6 8 7 9 50 Min 45 14 18 15.5 19 60 1.4 1.0 31 70 1 10 -1.5 dBm mS A V V V Typ Max 75 Units mA dBm dB % dB
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 5/02/01 Email: sales@filss.com
PRELIMINARY DATA SHEET
PACKAGED HIGH DYNAMIC RANGE PHEMT * ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Symbol VDS VGS IDS IG PIN TCH TSTG Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- -65 Min Max 7 -3 IDSS 5 60 175 175 Units V V mA mA mW C C
LPD200MX
Notes: Even temporary operating condions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
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HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. PACKAGE OUTLINE
(dimensions in inches)
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All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 5/02/01 Email: sales@filss.com

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